cystech electroni cs corp. spec. no. : c 872p3 issued date : 20 14 . 08 . 13 revised date : page no. : 1 / 8 mte040n20p3 cyste k product specification n - channel enhancement mode power mosfet mte040n20p3 features ? low gate charge ? simple drive requirement ? pb - free lead plating package equivalent circuit outline o rdering inf ormati on device package shipping mte040n20p3 - 0 - ue - s to - 247 (pb - free lead plating package) 3 0 pcs / tube, 10 tubes/ box , 10 boxes/carton to - 2 47 mte040n20p3 g gate d drain s source bv dss 200v i d 50a r ds(on) @v gs =10v, i d =28a 30.2m (typ) r ds(on) @v gs =6v, i d =10a 29.3m (typ) g d s environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, ue : 30 pcs / tube, 10 tubes/box, 10 boxes/carton product rank, zero for no rank products product name
cystech electroni cs corp. spec. no. : c 872p3 issued date : 20 14 . 08 . 13 revised date : page no. : 2 / 8 mte040n20p3 cyste k product specification absolute maximum ratings (t c =25 ? c , unless otherwise noted ) parameter symbol limits unit drain - sour c e vo ltage v ds 200 v gate - source voltage v gs 20 continuous drain current @ t c =25 ? c i d 50 a continuous drain current @ t c =100 ? c i d 35 pulsed drain current *1 i dm 200 avalanche current i as 14 avalanche energy @ l=2mh, i as =14a, r g =25 e as 196 mj repetitive avalanche energy @ l=0.05mh *2 e ar 30 total power dissipation @ t c =25 pd 300 w total power dissipation @ t c = 100 150 operating junction and storage temperature range tj, tstg - 55~+1 75 ? c note : *1 . pulse width limited by maximum junction temperature *2. duty cycle 1% thermal data parameter symbol value unit thermal resistance, junction - to - case, max r th,j - c 0.5 ? c /w thermal resistance, junction - to - ambient, max r th,j - a 40 ? c /w char acteristics (t c =25 ? symbol min. typ. max. unit test conditions static bv dss 200 - - v v gs = 0v , i d = 250 a v gs(th) 2.0 - 4.0 v v ds = v gs , i d = 250 a i gss - - 100 n a v gs = 20v, v ds =0v i dss - - 1 a v ds = 200v, v gs =0v - - 25 v ds = 160v, v gs =0v, t j =125 ? c r ds ( on ) *1 - 30.2 40 m v gs = 10v , i d = 28a - 29.3 46 v gs = 6v , i d = 10a g fs *1 - 44 - s v ds = 15v , i d = 28a dynamic qg *1, 2 - 98.5 - nc i d =28a, v ds =160v, v gs =10v qgs *1, 2 - 14.3 - qgd *1, 2 - 38.4 - t d(on) *1, 2 - 32 - ns v ds =100v, i d =28a, v gs =10v, r g =1.8 tr *1, 2 - 29 - t d(off) *1, 2 - 70 - t f *1, 2 - 17 -
cystech electroni cs corp. spec. no. : c 872p3 issued date : 20 14 . 08 . 13 revised date : page no. : 3 / 8 mte040n20p3 cyste k product specification ciss - 4467 - pf v gs =0v, v ds =25v, f=1mhz co ss - 392 - crss - 341 - rg - 0.6 - f=1mhz sou rce - drain diode i s *1 - - 50 a i sm *3 - - 200 v sd *1 - 0.81 1.2 v i s =28a, v gs =0v trr - 79 - ns i f =28a, di f /dt=100a/ s qrr - 300 - nc note : * 1. pulse test : pulse width ? 3 0 0s, duty cycle ? 2% *2.independent of operating temperature *3.pulse width limited by maximum junction temperature.
cystech electroni cs corp. spec. no. : c 872p3 issued date : 20 14 . 08 . 13 revised date : page no. : 4 / 8 mte040n20p3 cyste k product specification typical characteristics typical output characteristics 0 30 60 90 120 150 0 3 6 9 12 15 v ds , drain-source voltage(v) i d , drain current (a) 10v 9v 8v 7v 6v v gs =4v v gs =4.5v v gs =5v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature( c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 10 100 1000 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =4.5v v gs =6v v gs =10v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 0 5 10 15 20 25 30 i dr , reverse drain current(a) v sd , source-drain voltage(v) tj=25 c tj=150 c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 40 80 120 160 200 0 2 4 6 8 10 v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d = 28 a drain-source on-state resistance vs junction tempearture 0 0.4 0.8 1.2 1.6 2 2.4 2.8 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature( c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =28a r ds(on) @tj=25c : 30.2m
cystech electroni cs corp. spec. no. : c 872p3 issued date : 20 14 . 08 . 13 revised date : page no. : 5 / 8 mte040n20p3 cyste k product specification typical characteristics (cont.) capacitance vs drain-to-source voltage 100 1000 10000 0.1 1 10 100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature( c) v g s(th) , normalized threshold voltage i d =250 a forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 i d , drain current(a) g fs , forward transfer admittance(s) ta=25 c pulsed v ds =10v gate charge characteristics 0 2 4 6 8 10 0 20 40 60 80 100 qg, total gate charge(nc) v gs , gate-source voltage(v) i d = 28 a v ds =100v v ds =40v v ds =160v maximum safe operating area 0.1 1 10 100 1000 0.1 1 10 100 1000 v ds , drain-source voltage(v) i d , drain current(a) t c =25c, tj=175c v gs =10v, jc =0.5c/w single pulse dc 10ms r dson limited 100 s 10s 1ms maximum drain current vs case temperature 0 10 20 30 40 50 60 25 50 75 100 125 150 175 200 t c , case temperature( c) i d , maximum drain current(a) v gs =10v, r jc =0.5c/w
cystech electroni cs corp. spec. no. : c 872p3 issued date : 20 14 . 08 . 13 revised date : page no. : 6 / 8 mte040n20p3 cyste k product specification typical characteristics (co nt.) typical transfer characteristics 0 30 60 90 120 150 0 2 4 6 8 10 v gs , gate-source voltage(v) i d , drain current(a) v ds =10v power derating curve 0 50 100 150 200 250 300 350 0 25 50 75 100 125 150 175 200 t c , case temperature() p d , power dissipation(w) transient thermal response curves 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r jc (t)=r(t)*r jc 2.duty factor, d=t 1 /t 2 3.t jm -t c =p dm *r jc (t) 4.r jc =0.5 c/w
cystech electroni cs corp. spec. no. : c 872p3 issued date : 20 14 . 08 . 13 revised date : page no. : 7 / 8 mte040n20p3 cyste k product specification recommended wave soldering condition product peak temperature soldering time pb - free devices 260 +0/ - 5 ? c 5 +1/ - 1 seconds recommended temperature profile for ir reflow profile feature sn - pb eutectic assembly pb - free assembly average ramp - up rate (tsmax to tp) 3 ? c /second max. 3 ? c /second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 ? c 150 ? c 60 - 120 seconds 150 ? c 200 ? c 60 - 180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 ? c 60 - 150 seconds 217 ? c 60 - 150 seconds peak temperature(t p ) 240 +0/ - 5 ? c 260 +0/ - 5 ? c time within 5 ? c of actual peak temperature(tp) 10 - 30 seconds 20 - 40 seconds ramp down rate 6 ? c /second max. 6 ? c /second max. time 25 ? c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of th e package, measured on the package body surface.
cystech electroni cs corp. spec. no. : c 872p3 issued date : 20 14 . 08 . 13 revised date : page no. : 8 / 8 mte040n20p3 cyste k product specification to - 2 47 dimension dim inches millimeters dim inches millimeters min. max. min. max. min. max. min. max. a 0.191 0. 200 4. 85 0 5.15 0 e2 0.1 42 ref 3.6 00 ref a1 0.087 0.102 2.200 2.600 l 1.610 1.6 26 40.900 41.300 b 0. 039 0. 055 1.0 00 1.4 00 l1 0.976 0.988 24.800 25.100 b1 0. 110 0.1 26 2. 8 00 3.2 00 l2 0.799 0.811 20.300 20.600 b2 0.0 71 0.0 87 1.8 00 2.20 0 0.280 0.287 7.100 7.300 c 0.0 20 0.0 28 0.5 00 0.70 0 e 0.215 ref 5.450 ref c1 0.0 75 0.0 83 1. 9 00 2.10 0 h 0.235 ref 5.980 ref d 0.608 0. 62 0 15.450 15.75 0 h 0.000 0.012 0.000 0.300 e1 0.1 38 ref 3.5 00 ref notes: 1. controlling dimension: millimeters. 2 . maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please contact your local cystek sales office. material: ? ? mold compound: epoxy resin family, flammability solid burning class: ul94v - 0 . important notice: ? ? ? semiconductor products are not warranted to be suitable for use in life - support applications, or systems. ? marking: style: pin 1. gate 2. drain 3. source 3 - lead to - 247 plastic package cystek package code: p 3 e040n20 1 2 3 device name date code
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